SIM75D12SV1 Datasheet, PDF (1/7 Pages) SemiWell Semiconductor – “HALF-BRIDGE” IGBT MODULE

Preliminary
SIM75D12SV1
“HALF-BRIDGE” IGBT MODULE
Features
▪ Smarted NPT Technology Design
▪ 10µs Short circuit capability
▪ Low turn-off losses
▪ Short tail current for over 18KHZ
▪ Positive VCE(on)
temperature coefficient
Applications
▪ AC & DC Motor controls
▪ VVVF inverters
▪ Optimized for high frequency inverter
Type Welding machines
▪ High frequency SMPS
▪ UPS, Robotics
Package : V1
VCES = 1200V
Ic = 75A
VCE(ON) typ. = 2.6V
@ Ic = 75A
Absolute Maximum Ratings @ Tc = 25 (per leg)
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC
Continuous Collector Current
ICM
Pulsed collector current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
TSC
Short Circuit Withstand Time
Viso
Isolation Voltage test
Tj
Junction Temperature
Tstg
Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 500µA
TC = 80
TC = 80
TC = 80
AC 1 minute
Ratings
1200
± 20
75
150
75
150
10
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
Unit
V
V
A
A
A
A
µs
V


g
Nm
Nm
Electrical Characteristics @ Tj = 25 (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Test conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
-
-
VGE = 0V, IC = 500µA
VCE(ON) Collector-to-Emitter Saturation Voltage
-
2.6
2.8
V IC = 75A, VGE = 15V
VGE(th)
Gate Threshold Voltage
-
5.0
6.0
VCE = VGE, IC = 500µA
ICES
Zero Gate Voltage Collector Current
-
-
500
µA VGE = 0V, VCE = 1200V
IGES
Gate-to-Emitter Leakage Current
-
-
± 100 nA VCE = 0V, VGE = ± 20V
VFM
Diode Forward Voltage Drop
-
2.1
2.4
V IC = 75A