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SIM75D06AV1 Datasheet, PDF (1/4 Pages) SemiWell Semiconductor – “HALF-BRIDGE” IGBT MODULE | |||
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Preliminary
SIM75D06AV1
âHALF-BRIDGEâ IGBT MODULE
Feature
⪠4NBSU GJFME TUPQQFS 5SFODI
design technology
âªLow VCE (sat)
⪠Low Turn-off losses
Applications
⪠Motor controls
⪠VVVF inverters
⪠Inverter-type welding MC over 18KHZ
⪠SMPS, Electrolysis
⪠UPS/EPS, Robotics
⪠Short tail current for over 20KHz
Absolute Maximum Ratings @ Tj=25Â (Per Leg)
Package : V1
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
TC = Â
VGES
IC
ICP
IF
IFM
tp
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, VGE = 15V, VCC = 360V
TC = 80Â Â
TC = Â
TC = 80Â Â
TC = Â
TC = 150Â Â
Viso
Isolation Voltage test
AC @ 1 minute
Tj
Junction Temperature
Tstg
Storage Temperature
Weight Weight of Module
Md
Mounting torque with screw : M5
Terminal connection torque : M5
VCES = 600V
Ic= 75A
VCE(ON) typ. = 1.5V
@Ic= 75A
Ratings
600
 20
75 (100)
140
75 (100)
140
6 (8)
2500
-40 ~ 150
-40 ~ 125
190
2.0
2.0
Unit
V
V
A
A
A
A
É«
V
Â
Â
g
N.m
N.m
Static Characteristics @ Tj = 25Â (unless otherwise specified)
Parameters
Min Typ Max Unit
Test conditions
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
VF
Diode Forward Voltage Drop
RGINT Integrated gate resistor
1.50
5.8
IC = 75A, VGE = 15V
V
VCE = VGE, IC = 4ɶ
Æ
Æ
5.0
ɶ
VGE = 0V, VCE = 600V
Æ
Æ
400
É´ VCE = 0V, VGE = V
Æ
1.6
2.0
V IF = 75A, VGE = 0V
Æ
4
Æ
Ê
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