SIM300D06AV3 Datasheet, PDF (1/4 Pages) SemiWell Semiconductor – “HALF-BRIDGE” IGBT MODULE

Preliminary
SIM300D06AV3


“HALF-BRIDGE” IGBT MODULE



_Feature
▪
4NBSU
GJFME
TUPQQFS
5SFODI
design technology
▪
Low VCE (sat)
▪ Low Turn-off losses
▪ Short tail current for over 20KHz




_Applications
▪ Motor controls
▪ VVVF inverters
▪ Inverter-type welding MC over 18KHZ
▪ SMPS, Electrolysis
▪ UPS/EPS, Robotics
VCES = 600V
Ic=300A
VCE(ON) typ. = 1.5V
@Ic=300A
Absolute Maximum Ratings @ Tj=25 (Per Leg)
Package : V3
Symbol
Parameter
VCES
Collector-to-Emitter Voltage
Condition
TC = 
VGE
Gate emitter voltage
IC
Continuous Collector Current
TC = 80

ICP
Pulsed collector current
TC = 
IF
Diode Continuous Forward Current
TC = 80

IFM
Diode Maximum Forward Current
tp
Short circuit test, VGE = 15V, VCC = 360V
TC = 
TC = 150
25

Viso
Isolation Voltage test
AC @ 1 minute
Weight Weight of Module
Tj
Junction Temperature
Tstg
Storage Temperature
Md
Mounting torque with screw : M6
Ratings
600
‚ 20
300 (430)
600
300 (430)
600
6 (8)
2500
360
-40 ~ 150
-40 ~ 125
4.0
Unit
V
V
A
A
A
A
É«
V
g


N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
Min Typ Max Unit
Test conditions
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
VF
Forward voltage drop
RGINT Integrated gate resistor
1.50
1.95
5.8
6.5
IC = 300A, VGE = 15V
V
VCE = VGE, IC = 8ɶ
Ɩ
Ɩ
5.0
ɶ
VGE = 0V, VCE = 600V
Ɩ
Ɩ
400
É´
VCE = 0V, VGE = V
1.6
1.9
V
IF = 300A
Ɩ
1
Ɩ
Ω