SIM200D12SV3 Datasheet, PDF (1/7 Pages) SemiWell Semiconductor – HALF-BRIDGE IGBT MODULE

Preliminary
SIM200D12SV3
“HALF-BRIDGE” IGBT MODULE
Features
Applications
▪5rench gate + field stopper, using ▪ AC & DC Motor controls
Infineon chip design
▪ VVVF inverters
▪ 10µs Short circuit capability
▪ Optimized for high frequency inverter
▪ Low turn-off losses
Type Welding machines
▪ Short tail current for over 18KHz
▪ SMPS
Package : V3
▪ Positive VCE(on)
▪ UPS, Robotics
temperature coefficient
Absolute Maximum Ratings @ Tj=25 (per leg)
VCES = 1200V
Ic = 200A
VCE(ON) typ. = 1.7V
@ Ic = 200A
Symbol
Parameter
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC
Continuous Collector Current
ICM
Pulsed collector current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
TSC
Short Circuit Withstand Time
Viso
Isolation Voltage test
Tj
Junction Temperature
Tstg
Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
Condition
VGE = 0V, IC = 1.0mA
TC = 80 
TC = 25
TC = 80 
Tc=
AC 1 minute
Ratings
1200
± 20
200(260)
400
200(260)
400
10
2500
-40 ~ 150
-40 ~ 125
360
3.5
3.5
Unit
V
V
A
A
A
A
µs
V


g
Nm
Nm
Electrical Characteristics @ Tj = 25 (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Test conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
-
-
VGE = 0V, IC = 1.0mA
VCE(ON) Collector-to-Emitter Saturation Voltage
1.4
1.7 2.15
V IC = 200A, VGE = 15V
VGE(th)
Gate Threshold Voltage
5.0
5.8
6.5
VCE = VGE, IC = 500µA
ICES
Zero Gate Voltage Collector Current
-
-
1.0
mA VGE = 0V, VCE = 1200V
IGES
Gate-to-Emitter Leakage Current
-
-
± 200 nA VCE = 0V, VGE = ± 20V