SIM200D06AV2 Datasheet, PDF (1/4 Pages) SemiWell Semiconductor – “HALF-BRIDGE” IGBT

Preliminary
SIM200D06AV2
“HALF-BRIDGE” IGBT


_Feature
▪
4NBSU
GJFME
TUPQQFS
5SFODI
design technology
▪
Low VCE (sat)
▪ Low Turn-off losses
▪ Short tail current for over 20KHz


_Applications
▪ Motor controls
▪ VVVF inverters
▪ Inverter-type welding MC over 18KHZ
▪ SMPS, Electrolysis
▪ UPS/EPS, Robotics
Absolute Maximum Ratings @ Tj=25 (Per Leg)
PKG: V2=48mm
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
TC = 
VGE
Gate emitter voltage
IC
Continuous Collector Current
ICP
Pulsed collector current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
tp
Short circuit test, VGE = 15V, VCC = 360V
TC = 80

TC = 
TC = 80

TC = 
TC = 150
25

Viso
Isolation Voltage test
AC @ 1 minute
Weight Weight of Module
Tj
Junction Temperature
Tstg
Storage Temperature
Md
Mounting torque with screw : M5
Terminal connection torque : M5
VCES = 600V
Ic= 200A
VCE(ON) typ. = 1.6V
@Ic= 200A
Ratings
600
‚ 20
200 (290)
450
200 (290)
400
6 (8)
2500
190
-40 ~ 150
-40 ~ 125
2.0
2.0
Unit
V
V
A
A
A
A
É«
V
g


N.m
N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
Min Typ Max Unit
Test conditions
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
VF
Forward voltage drop
RGINT Integrated gate resistor
1.60
1.95
5.8
6.5
IC = 200A, VGE = 15V
V
VCE = VGE, IC = 4ɶ
Ɩ
Ɩ
5.0
ɶ
VGE= 0V, VCE = 600V
Ɩ
Ɩ
400
É´
VCE = 0V, VGE = V
1.6
1.9
7
IF = 200A
Ɩ
2
Ɩ
ʃ