SIM150D12SV3 Datasheet, PDF (1/8 Pages) SemiWell Semiconductor – “HALF-BRIDGE” IGBT Module

Preliminary
SIM150D12SV3
“HALF-BRIDGE” IGBT Module
Features
Applications
▪ Update NPT Technology design
▪ SMPS & Electrolysis Machine
▪ 10µs Short circuit capability
▪ High Power Inverters
▪ Low turn-off loss
▪ High Frequency inverter-type
▪ Short tail current for over 18KHz
Welding machines
▪ Positive VCE(on)
▪ Servo Controls
PKG V3 62 mm
temperature coefficient
▪ UPS, EPS or Robotics
Absolute Maximum Ratings @ Tj=25 (per leg)
VCES = 1200V
Ic = 150A
VCE(ON) typ. = 2.7V
@ Ic = 150A
Symbol
Parameter
Condition
Ratings
Unit
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC
Continuous Collector Current
ICM
Pulsed collector current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
TSC
Short Circuit Withstand Time
Viso
Isolation Voltage test
Tj
Junction Temperature
Tstg
Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 1.0mA
TC = 80
TC = 80
TC = 80
AC 1 minute
1200
V
‚ 20
V
150
A
300
A
150
A
300
A
10
µs
2500
V
-40 ~ 150

-40 ~ 125

360
g
3.5
Nm
3.5
Nm
Electrical Characteristics @ Tj = 25 (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Test conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
-
-
VGE = 0V, IC = 1.0mA
VCE(ON) Collector-to-Emitter Saturation Voltage
-
2.7
3.1
V IC = 150A, VGE = 15V
VGE(th)
Gate Threshold Voltage
5.0
6.0
VCE = VGE, IC = 500µA
ICES
Zero Gate Voltage Collector Current
-
-
1.0
mA VGE = 0V, VCE = 1200V
IGES
Gate-to-Emitter Leakage Current
-
-
± 200 nA VCE = 0V, VGE = ± 20V
VFM
Diode Forward Voltage Drop
-
2.1
2.4
V IC = 150A
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