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SIM150D06AV1 Datasheet, PDF (1/4 Pages) SemiWell Semiconductor – “HALF-BRIDGE” IGBT MODULE | |||
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Preliminary
SIM150D06AV1
âHALF-BRIDGEâ IGBT MODULE
Feature
Applications
⪠4NBSU GJFME TUPQQFS 5SFODI ⪠Motor controls
design technology
⪠VVVF inverters
âªLow VCE (sat)
⪠Inverter-type welding MC over 18KHZ
⪠Low Turn-off losses
⪠SMPS, Electrolysis
⪠Short tail current for over 20KHz ⪠UPS/EPS, Robotics
Absolute Maximum Ratings @ Tj=25Â (Per Leg)
Package : V1
Symbol
Parameter
Condition
VCES
VGES
IC
ICP
IF
IFM
tp
Viso
Tj
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, VGE = 15V, VCC = 360V
Isolation Voltage test
Junction Temperature
TC = Â
TC = 80Â Â
TC = Â
TC = 80Â Â
TC = Â
TC = 150Â Â
AC @ 1 minute
Tstg
Weight
Storage Temperature
Weight of Module
Md
Mounting torque with screw : M5
Td
Terminal connection torque : M5
VCES = 600V
Ic=150A
VCE(ON) typ. = 1.5V
@Ic=150A
Ratings
600
 20
150 (210)
300
150 (210)
300
6 (8)
2500
-40 ~ 150
-40 ~ 125
190
2.0
2.0
Unit
V
V
A
A
A
A
É«
V
Â
Â
g
N.m
N.m
Static Characteristics @ Tj = 25Â (unless otherwise specified)
Parameters
Min Typ Max Unit
Test conditions
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
VF
Forward voltage drop
RGINT Integrated gate resistor
1.50
1.95
5.8
6.5
IC = 150A, VGE = 15V
V
VCE = VGE, IC = 4ɶ
Æ
Æ
5.0
ɶ
VGE = 0V, VCE = 600V
Æ
Æ
400
É´ VCE = 0V, VGE = V
1.6
1.9
V IF = 150A
Æ
2
Æ
Ê
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