SIM100D12SV1 Datasheet, PDF (1/7 Pages) SemiWell Semiconductor – HALF-BRIDGE IGBT

Preliminary
“HALF-BRIDGE” IGBT

<sub>Features

Applications</sub>
▪5rench gate + field stopper, using
Infineon chip design
▪ AC & DC Motor controls
▪ 10µs Short circuit capability
▪ VVVF inverters
▪ Low turn-off losses
▪ Optimized for high frequency inverter
▪ Short tail current for over 18KHz
Type Welding machines
▪ Positive VCE(on)
▪ High frequency SMPS
temperature coefficient
▪ UPS, Robotics
SIM100D12SV1
VCES = 1200V
Ic = 100A
VCE(ON) typ. = 1.7V
@ Ic = 100A
Package : V1
Absolute Maximum Ratings @ Tc = 25 (per leg)
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC
Continuous Collector Current
ICM
Pulsed collector current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
TSC
Short Circuit Withstand Time
Viso
Isolation Voltage test
Tj
Junction Temperature
Tstg
Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 500µA
TC = 80 
TC = 25
TC = 80 
TC= 
AC 1 minute
Ratings
1200
± 20
100(140)
200
100(140)
200
10
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
Unit
V
V
A
A
A
A
µs
V


g
Nm
Nm