SIM100D06AV1 Datasheet, PDF (1/4 Pages) SemiWell Semiconductor – “HALF-BRIDGE” IGBT MODULE

Preliminary
SIM100D06AV1
“HALF-BRIDGE” IGBT MODULE


_Feature
▪
4NBSU
GJFME
TUPQQFS
5SFODI
design technology
▪
Low VCE (sat)
▪ Low Turn-off losses
▪ Short tail current for over 20KHz

_Applications
▪ Motor controls
▪ VVVF inverters
▪ Inverter-type welding MC over 18KHZ
▪ SMPS, Electrolysis
▪ UPS/EPS, Robotics
Absolute Maximum Ratings @ Tj=25 (Per Leg)
Package : V1
Symbol
Parameter
Condition
VCES
VGES
IC
ICP
IF
IFM
tp
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, VGE = 15V, VCC = 360V
TC = 
TC = 80

TC = 
TC = 80

TC = 
TC = 150

Viso
Isolation Voltage test
AC @ 1 minute
Tj
Junction Temperature
Tstg
Storage Temperature
Weight Weight of Module
Md
Mounting torque with screw : M5
VCES = 600V
Ic= 100A
VCE(ON) typ. = 1.5V
@Ic= 100A
Ratings
600
‚ 20
100 (130)
200
100 (130)
200
6 (8)
2500
-40 ~ 150
-40 ~ 125
190
2.0
Unit
V
V
A
A
A
A
É«
V


g
N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
Min Typ Max Unit
Test conditions
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
VFM Diode Forward Voltage Drop
RGINT Integrated gate resistor
_
1.50
1.95
IC = 100A, VGE = 15V
V
5.8
6.5
VCE = VGE, IC = 4ɶ
Ɩ
Ɩ
5.0
ɶ
VGE = 0V, VCE = 600V
Ɩ
Ɩ
400
É´
VCE = 0V, VGE = V
Ɩ
1.6
2.0
V
IF = 100A, VGE = 0V
Ɩ
2
Ɩ
ʃ