SFS4936 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – Dual N-Channel MOSFET

SemiWell Semiconductor
SFS4936
Dual N-Channel MOSFET
Features
■ Low R_DS(on) (0.035Ω )@V_GS=10V
Low R_DS(on) (0.053Ω )@V_GS=4.5V
■ Gate Charge (Typical 20nC)
■ Improved dv/dt Capability
■ Maximum Junction Temperature Range (150°C)
■ Available in Tape and Reel
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for Battery switch, Load switch and Motor controler.
Symbol
D₂ 5
D₂ 6
D₁ ⁷
D₁ 8
4 G₂
3 S₂
2 _G1
1 _S1
8-SOIC
D₁^{D1D2 D2}
S₁^G1S2G2
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_A = 25°C)
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (T_A=25°C)
Total Power Dissipation Single Operation (T_A=70°C)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction-to-Ambient
(Note 4)
Min.
-
(Note 1)
Value
30
5.8
30
±20
2.0
1.28
- 55 ~ 150
300
Value
Typ.
-
Max.
62.5
Units
V
A
A
V
W
W
°C
°C
Units
°C/W
December, 2002. Rev. 1.
1/6
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