SFS4416 Datasheet, PDF (1/6 Pages) SemiWell Semiconductor – Logic N-Channel MOSFET

SemiWell Semiconductor
Features
■ Low R_DS(on) (Max 0.018Ω )@V_GS=10V
Low R_DS(on) (Max 0.028Ω )@V_GS=4.5V
■ Gate Charge (Typical 16nC)
■ Maximum Junction Temperature Range (150°C)
■ Available in Tape and Reel
SFS4416
Logic N-Channel MOSFET
Symbol
D5
4G
D6
3S
D7
2S
D8
1_S
General Description
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for power management circuit or DC-DC converter.
8-SOIC
D
D
D
D
G
SS
S
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_A = 25°C)
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (T_A=25°C)
Total Power Dissipation Single Operation (T_A=70°C)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction-to-Ambient
(Note 4)
Min.
-
(Note 1)
Value
30
9
50
±20
2.5
1.6
- 55 ~ 150
300
Value
Typ.
-
Max.
50
Units
V
A
A
V
W
W
°C
°C
Units
°C/W
January, 2003. Rev. 0.
1/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.