SFP740_11 Datasheet, PDF (1/5 Pages) SemiWell Semiconductor – N-Channel MOSFET

SemiWell Semiconductor
N-Channel MOSFET
Features
◆ R_DS(ON) Max 0.55 ohm at V_GS = 10V
◆ Gate Charge ( Typical 46nC)
◆ Improve dv/dt capability, Fast switching
◆ 100% avalanche Tested
General Description
This MOSFET is produced using advanced planar strip
DMOS technology. This latest technology has been
especially designed to minimize on-state resistance have a
high rugged avalanche characteristics. These device are well
suited for half bridge and full bridge resonant topology like to
electronic lamp ballast.
SFP740
Absolute Maximum Ratings (T_J = 25℃ unless otherwise specified)
Symbol
VDSS
ID
VGSS
IDM
EAS
EAR
dv/dt
PD
Tj, TSTG
Parameter
Drain-Source Voltage
Drain Current TC=25℃
TC=100℃
Gate-Source Voltage
Drain Current pulse
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Power Dissipation TC=25℃
Operation and Storage Temperature range
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Ratings
400
10
6.3
± 30
40
680
12.5
5.0
125
-45 ~ 150
Units
V
A
V
A
mJ
mJ
V/ns
W
℃
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