SFP30N06 Datasheet, PDF (1/7 Pages) SemiWell Semiconductor – N-Channel MOSFET

SemiWell Semiconductor
SFP30N06
Features
■ Low R_DS(on) (0.04Ω )@V_GS=10V
■ Low Gate Charge (Typical 27nC)
■ Low Crss (Typical 75pF)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (175°C)
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
N-Channel MOSFET
Symbol
1. Gate {
{ ^{2. Drain}
●
◀▲
●
●
{ _{3. Source}
TO-220
123
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_C = 25°C)
Continuous Drain Current(@T_C = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 3)
Value
60
30
21.2
120
±20
430
7.0
79
0.53
- 55 ~ 175
300
Value
Typ.
-
0.5
-
Max.
1.90
-
62.5
Units
V
A
A
A
V
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
September, 2002. Rev. 0.
1/7
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.