SFF4N60_11 Datasheet, PDF (1/5 Pages) SemiWell Semiconductor – N-Channel MOSFET

SemiWell Semiconductor
SFF4N60
N-Channel MOSFET
Features
◆ R_DS(ON) Max 2.5 ohm at V_GS = 10V
◆ Gate Charge ( Typical 16.0nC)
◆ Improve dv/dt capability, Fast switching
◆ 100% avalanche Tested
General Description
This MOSFET is produced using advanced planar strip
DMOS technology. This latest technology has been
especially designed to minimize on-state resistance have a
high rugged avalanche characteristics. These devices are
well suited for high efficiency switch mode power supply
active power factor correction. Electronic lamp based on half
bridge topology
Absolute Maximum Ratings (T_J = 25℃ unless otherwise specified)
Symbol
VDSS
ID
VGSS
IDM
EAS
EAR
dv/dt
PD
Tj, TSTG
Parameter
Drain-Source Voltage
Drain Current TC=25℃
TC=100℃
Gate-Source Voltage
Drain Current pulse
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Power Dissipation TC=25℃
Operation and Storage Temperature range
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Ratings
600
4
2.4
± 30
8
180
10.4
4.5
104
-45 ~ 150
Units
V
A
V
A
mJ
mJ
V/ns
W
℃
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