SFD2N60 Datasheet, PDF (1/8 Pages) SemiWell Semiconductor – N-Channel MOSFET

SemiWell Semiconductor
SFD/U2N60
N-Channel MOSFET
Features
■ R_DS(on) (Max 5.0 Ω )@V_GS=10V
■ Gate Charge (Typical 9.5nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate_{
{ _{2. Drain}
●
◀▲
●
●
{ ^{3. Source}
D-PAK, I-PAK
2
1
3
12 ₃
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_C = 25°C)
Continuous Drain Current(@T_C = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient*
R_θJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
1.8
1.1
6.0
±30
120
4.4
4.5
44
0.35
- 55 ~ 150
300
Value
Typ.
-
-
-
Max.
2.87
50
110
Copyright@Semiwell Semiconductor Inc., All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W