SCD4C60S Datasheet, PDF (1/2 Pages) SemiWell Semiconductor – Silicon Controlled Rectifiers

SemiWell Semiconductor
Preliminary
SCD4C60S
Silicon Controlled Rectifiers
Features
£ Repetitive Peak Off-State Voltage : 600V
£ R.M.S On-State Current ( I_T(RMS)= 4 A )
£ Low On-State Voltage (1.6V(Typ.) @ I_TM)
General Description
Standard gate triggering SCR is suitable for the application
where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control cir-
cuit in power tool,inrush current limit circuit and heating control
system.
Symbol
Ÿ
2. Anode
3. Gate
Ÿ
Ÿ
1. Cathode
D-PAK
1
2
3
Absolute Maximum Ratings ( T_J = 25°C unless otherwise specified )
Symbol
Parameter
Condition
V_DRM
I_T(AV)
I_T(RMS)
I_TSM
I²t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I²t for Fusing
Half Sine Wave : T_C =106 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt
Critical rate of rise of on-state current
P_GM
P_G(AV)
I_FGM
V_RGM
T_J
T_STG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Ratings
600
2
4
33
21
50
0.5
0.1
0.3
6.0
- 40 ~ 125
- 40 ~ 125
Units
V
A
A
A
A²s
A/É«
W
W
A
V
°C
°C
Oct, 2005.
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