SBW13009 Datasheet, PDF (1/6 Pages) SemiWell Semiconductor – High Voltage Fast-Switching NPN Power Transistor

SemiWell Semiconductor
SBW13009
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 40ns@8.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 320mV@8.0A/1.6A)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as switching mode power supply.
Symbol
1.Base ○
○ 2.Collector
○ 3.Emitter
TO-247
Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_C
T_STG
T_J
Parameter
Collector-Emitter Voltage ( V_BE = 0 )
Collector-Emitter Voltage ( I_B = 0 )
Emitter-Base Voltage ( I_C = 0 )
Collector Current
Collector Peak Current ( t_P ＜ 10 ms )
Base Current
Base Peak Current ( t_P ＜ 10 ms )
Total Dissipation at T_C = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
2
3
Value
700
400
9.0
12
25
6.0
12
130
- 65 ~ 150
150
Value
0.96
40
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
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