SBW13009-O Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High voltage Fast Switching NPN Power Transistor

SemiWell Semiconductor
SBW13009-O
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed
- Minimum Lot-to-Lot hFE Variation
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching mode power
supply.
Symbol
1.Base ○
○ 2.Collector
○ 3.Emitter
TO-3P
Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
I_BM
P_C
T_STG
T_J
Parameter
Collector-Emitter Voltage ( V_BE = 0 )
Collector-Emitter Voltage ( I_B = 0 )
Emitter-Base Voltage ( I_C = 0 )
Collector Current
Collector Pulse Current
Base Current
Base Peak Current ( t_P ＜ 5 ms )
Total Dissipation at T_C = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
123
Value
700
400
9.0
12.0
24.0
6.0
12.0
130
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Value
1.67
62.5
Units
°C/W
°C/W
Jul, 2006. Rev. 0
1/4
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