SBR13003A Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast -Switching NPN Power Transistor

SemiWell Semiconductor
SBR13003A
High Voltage Fast-Switching NPN Power Transistor
Features
£ Very High Switching Speed (Typical 120ns@1.0A)
£ Minimum Lot-to-Lot hFE Variation
£ Low VCE(sat) (Typical 200mV@1.0A/0.25A)
£ Wide Reverse Bias S.O.A
General Description
This devices is designed for high voltage, high speed switch-
ing characteristic required such as lighting system, switching
regulator, inverter and deflection circuit.
Symbol
1.Base Ÿ
Ÿ 2.Collector
Ÿ 3.Emitter
TO-126
Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_C
T_STG
T_J
Parameter
Collector-Emitter Voltage ( V_BE = 0 )
Collector-Emitter Voltage ( I_B = 0 )
Emitter-Base Voltage ( I_C = 0 )
Collector Current
Collector Peak Current ( t_P ģ 5 ms )
Base Current
Base Peak Current ( t_P ģ 5 ms )
Total Dissipation at T_C = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
123
Value
700
400
9.0
1.5
3.0
0.75
1.5
40
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Value
3.12
89
Units
°C/W
°C/W
Mar, 2006. Rev. 0
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