SBP13003 Datasheet, PDF (1/4 Pages) SemiWell Semiconductor – High Voltage Fast-Switching NPN Power Transistor

SemiWell Semiconductor
SBP13003
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed
- Minimum Lot-to-Lot hFE Variation
- Short storge time
- Wide Reverse Bias S.O.A
General Description
This devices is designed for high voltage, high speed switching
characteristic,especially suitable for ballast sysytem.
Symbol
1.Base ○
○ 2.Collector
○ 3.Emitter
TO-220
Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
P_C
T_STG
T_J
Parameter
Collector-Emitter Voltage ( V_BE = 0 )
Collector-Emitter Voltage ( I_B = 0 )
Emitter-Base Voltage ( I_C = 0 )
Collector Current
Collector Peak Current ( t_P ＜ 5 ms )
Base Current
Total Dissipation at T_C = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
123
Value
700
400
9.0
1.5
3
0.75
20
- 65 ~ 150
150
Units
V
V
V
A
A
A
W
°C
°C
Value
1.56
62.5
Units
°C/W
°C/W
Jan, 2007. Rev. 0
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