SBN13001 Datasheet, PDF (1/4 Pages) SemiWell Semiconductor – High Voltage Fast-Switching NPN Power Transistor

SemiWell Semiconductor
SBN13001
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 120ns@100mA)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 120mV@100mA/20mA)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
Symbol
1.Base ○
○ 2.Collector
○ 3.Emitter
TO-92
Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_C
T_STG
T_J
Parameter
Collector-Emitter Voltage ( V_BE = 0 )
Collector-Emitter Voltage ( I_B = 0 )
Emitter-Base Voltage ( I_C = 0 )
Collector Current
Collector Peak Current ( t_P ＜ 5 ms )
Base Current
Base Peak Current ( t_P ＜ 5 ms )
Total Dissipation at T_A = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction-to-Ambient
1
23
Value
700
400
8.0
0.2
0.4
0.1
0.2
750
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
mW
°C
°C
Value
166
Units
°C/W
Oct, 2002. Rev. 1
1/4
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