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SBL13003 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – High Voltage Fast-Switching NPN Power Transistor
SemiWell Semiconductor
SBL13003
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 120ns@1.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 200mV@1.0A/0.25A)
- Wide Reverse Bias S.O.A
General Description
This devices is designed for high voltage, high speed switching
characteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
Symbol
1.Base ○
○ 2.Collector
○ 3.Emitter
TO-92L
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP < 5 ms )
Base Current
Base Peak Current ( tP < 5 ms )
Total Dissipation at TA = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
1
23
Value
700
400
9.0
1.5
3.0
0.75
1.5
1.5
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Value
83
Units
°C/W
Oct, 2002. Rev. 2
1/5
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