P10M40CT Datasheet, PDF (1/3 Pages) SemiWell Semiconductor – 10A Schottky Barrier Rectifier

PROVISIONAL
SemiWell Semiconductor
P10M40CT
10A Schottky Barrier Rectifier
Features
Plastic material meets UL94V-0
Metal silicon junction
Very low forward voltage drop
High current / High surge capability
Guarding for over voltage protection
Lead solderable per MIL-STD202,method 208 guaranteed
Lead temperature for soldering purpose 250°C Max
for 10 second
Weight : 2.2 gram (approximately)
General Description
The P10M40CT schottky Rectifier has been designed for
applications requiring low forward voltage drop and switching
power supply, dc-dc converter, free-wheeling diode, battery
charging, polarity protection application.
Symbol
1! _:b
!2
3 ! _:b
TO-220
1
23
Absolute Maximum Ratings
Symbol
V_RRM
V_R
I_F(AV)
I_FSM
Eas
T_J
T_STG
Parameter
Repetitive Peak Reverse Voltage
Maximum DC Reverse Voltage
Average Forward Current @ T_C = 97°C
Per Diode
Total Device
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions half sinewave,single phase, 60Hz)
Non-Repetitive Avalanche Energy @ T_C=25°C , Vdd = 15V , L=18uH
Maximum Junction Temperature
Storage Temperature Range
Value
40
40
5
10
175
3.5
- 65 ~ 125
- 65 ~ 150
Units
V
V
A
A
A
mJ
°C
°C
Thermal Characteristics
Symbol
R_θJC
Parameter
Maximum Thermal Resistance, Junction-to-Case ( per diode )
Value
3.0
Nov, 2002. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Units
°C/W
1/3