2N7000 Datasheet, PDF (1/6 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

SemiWell Semiconductor
Features
■ R_DS(on) (Max 5 Ω )@V_GS=10V
R_DS(on) (Max 5.3Ω )@V_GS=4.5V
■ Gate Charge (Typical 0.5nC)
■ Maximum Junction Temperature Range (150°C)
2N7000
Logic N-Channel MOSFET
Symbol
2. Gate {
{ ^{3. Drain}
●
◀▲
●
●
{ _{1. Source}
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
TO-92
12
3
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_A = 25°C)
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (T_A=25°C)
Total Power Dissipation Single Operation (T_A=70°C)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction-to-Ambient
Min.
-
(Note 1)
Value
60
200
500
±20
0.4
3.2
- 55 ~ 150
300
Value
Typ.
-
Max.
312.5
Units
V
mA
mA
V
W
mW
°C
°C
Units
°C/W
January, 2003. Rev. 0.
1/6
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