MSQA6V1W5 Datasheet, PDF (2/3 Pages) Shanghai Semitech Semiconductor Co., Ltd – Low Capacitance

MSQA6V1W5
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Parameter
I_PP Maximum Reverse Peak Pulse Current
V_C Clamping Voltage @ I_PP
V_RWM
I_R
I_T
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V_RWM
Test Current
V_BR Breakdown Voltage @ I_T
I_F Forward Current
V_F Forward Voltage @ I_F
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
V_RWM ^IR^(uA)
(V) _{@ VRWM}
V_BR (V)
@ 1 mA
V_F (V)
@ 200mA
Device
Marking Max Max Min Nom Max
Max
MSQA6V1W5 WE
3
1.0
6.1 6.6 7.2
1.25
Capacitance
@ OV Bias(pF)(note 2)
Typ
Max
--
90
*Surge current waveform per Figure 1.
2. Capacitance of one diode at f=1MHz,VR=0V, TA=25°C．
Fig1. Pulse Waveform