P4SMA Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Transient Voltage Suppressor

4
SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
P4SMA Series
400W Surface Mount
Transient Voltage Suppressors
Features
l Peak power dissipation 400W @10 x 1000 us Pulse
l Low profile package.
l Excellent clamping capability.
SMA
l Glass passivated junction.
l Fast response time: typically less than 1ps from 0 Volts to BV min
l Typical I_R less than 1uA when V_BR min above 12V.
l IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact)
l ESD protection of data lines in accordance with IEC 61000-4-2
Bi-directional
l EFT protection of data lines in accordance with IEC 61000-4-4
l Halogen free and RoHS compliant
Cathode
Anode
l Lead-free finish
Uni-directional
Mechanical Characteristics
l CASE: SMA (DO-214AC) Molded Plastic over glass passivated junction.
l Mounting Position: Any
l Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device.
l Terminal: Solder plated
Maximum Ratings and Characteristics @ 25°C Ambient Temperature (unless otherwise noted)
Parameter
Symbol
Value
Units
Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, 2, FIG.1)
P_PPM
Min 400
W
Power Dissipation on Infinite Heat Sink at T_L=50°C
P_D
3.3
W
Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3)
I_PPM
See Table 1
A
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave (Note 2. 3)
Operating Junction Temperature Range
Storage Temperature Range
I_FSM
60
A
T_J
-55 to 150
°C
T_STG
-55 to 150
°C
Notes:
1. Non-repetitive current pulse, per Fig.3 and derated above T_A=25°C per Fig.2.
2. Mounted on 5.0x5.0mm² (0.03mm thick) Copper Pads to each terminal.
3. Measured on 8.3ms single half sine-wave, or equivalent square wave, for Unidirectional device only.
Rev. 2.0, 10-Nov.-16
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