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4.0SMDJ Datasheet, PDF (1/5 Pages) Shanghai Semitech Semiconductor Co., Ltd – Low profile package
SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
4.0SMDJ Series
4000W Surface Mount
Transient Voltage Suppressors
Features
l Peak power dissipation 4000W @10 x 1000 us Pulse
l Low profile package.
l Excellent clamping capability.
l Typical IR less than 2uA when VBR above 12V.
l Glass passivated junction.
l Fast response time: typically less than 1.0ps from 0 Volts to BV min
l IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact)
l ESD protection of data lines in accordance with IEC 61000-4-2
l EFT protection of data lines in accordance with IEC 61000-4-4
l Halogen free and RoHS compliant
l Lead-free finish
SMC
Bi-directional
Cathode
Anode
Mechanical Characteristics
Uni-directional
l CASE: SMC (DO-214AB) Molded Plastic over glass passivated junction.
l Mounting Position: Any
l Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device.
l Terminal: Solder plated
Maximum Ratings and Characteristics @ 25°C Ambient Temperature (unless otherwise noted)
Parameter
Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, 2, FIG.1)
Power Dissipation on Infinite Heat Sink at TL=50°C
Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave (Note 2. 3)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
PPPM
PD
IPPM
IFSM
TJ
TSTG
Value
4000
6.5
See Table 1
300
-55 to 150
-55 to 150
Units
W
W
A
A
°C
°C
Notes:
1. Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig.2.
2. Mounted on 8.0x8.0mm2 (0.03mm thick) Copper Pads to each terminal.
3. Measured on 8.3ms single half sine-wave, or equivalent square wave, for Unidirectional device only.
Rev. 2.0, 2-Dec.-16
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