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SW20N50 Datasheet, PDF (4/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Power MOSFET | |||
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SAMWIN
SW20N50
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
3.0
2.5
2.0
1.5
Fig. 9. Maximum drain current vs.
case temperature.
9
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T Case Temperature [oC]
C'
1.0
0.5
0.0
-100
*. Notes :
1. V = 10 V
GS
2. I = 4.4 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Fig. 10. Maximum safe operating area
102
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
100 ïs
1 ms
10 ms
DC
Ø Ø·Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
Fig. 11. Transient thermal response curve
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
single pulse
Ø Ø·Notes :
1. Z (t) = 1 ØØ©/W Max.
¥èJC
2. Duty Factor, D=t /t
12
3. T - T = P * Z (t)
JM
C
DM
¥èJC
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t , Square Wave Pulse Duration [sec]
1
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