SW20N60 Datasheet, PDF (3/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Power MOSFET

SAMWIN
Fig. 1. On-state characteristics
Top :
V
GS
15.0V
10.0V
10¹
9.0V
8.0V
6.0V
5.0V
Bottom :
10⁰
10^-1
10^-1
*. Notes :
1. 250¥ىs Pulse Test
2. T = 25^oC
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Fig. 3. On-resistance variation vs.
drain current and gate voltage
2.5
2.0
V = 10V
GS
1.5
1.0
V = 20V
GS
0.5
0.0
0
، طNote : T = 25oC
J
5
10
15
20
25
I , Drain Current [A]
D
Fig. 5. Capacitance characteristics
(Non-Repetitive)
3000
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
C
iss
C
oss
C
rss
5
C =C +C (C =shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
*. Notes :
1. V = 0V
GS
2. f=1MHz
10
15
20
25
30
35
40
V , Drain-Source Voltage [V]
DS
SW20N60
Fig. 2. Transfer characteristics
10¹
10⁰
10^-1
2
150^oC
25^oC
-55^oC
*. Notes :
1. V = 50V
DS
2. 250us Pulse Test
3
4
5
6
7
8
9
10
V , Gate-Source Voltage [V]
GS
Fig. 4. On state current vs.
diode forward voltage
10¹
150^oC
25^oC
10⁰
10^-1
0.2
*. Notes :
1. V = 0V
GS
2. 250us Pulse Test
0.4
0.6
0.8
1.0
1.2
V , Source-Drain voltage [V]
SD
Fig. 6. Gate charge characteristics
12
V = 120V
DS
10
V = 300V
DS
8
V = 520V
DS
6
4
2
*. Note : I = 10.0A
D
0
0
10
20
30
40
Q , Total Gate Charge [nC]
G
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