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SW1N60L Datasheet, PDF (3/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel MOSFET | |||
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SAMWIN
SW1N60L
Fig. 1. On-state characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
100
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
â» Notes :
1. 250μs Pulse Test
2. T = 25â
C
100
101
V , Drain-Source Voltage [V]
DS
Fig. 3. On-resistance variation vs.
drain current and gate voltage
40
35
30
V = 10V
GS
25
20
15
V = 20V
GS
10
5
Ø Ø·Note : T = 25ØØ©
J
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I , Drain Current [A]
D
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 2. Transfer characteristics
100
10-1
2
150oC
25oC
-55oC
â» Notes :
1. V = 50V
DS
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Fig. 4. On state current vs.
diode forward voltage
100
150ØØ©
25ØØ©
Ø Ø·Notes :
1. V = 0V
GS
2. 250Â¥Ùs Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Fig. 6. Gate charge characteristics
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