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SW20N65K Datasheet, PDF (2/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-220/TO-220F MOSFET
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SAMWIN
SW20N65K
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
VDS=650V, VGS=0V
VDS=520V, TC=125oC
Gate to source leakage current, forward VGS=30V, VDS=0V
IGSS
Gate to source leakage current, reverse VGS=-30V, VDS=0V
On characteristics
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 10A
VDS =30V, ID =10A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=325V, ID=20A，RG=25Ω
(note 4，5)
VDS=520V, VGS=10V, ID=20A
(note 4，5)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
VSD Diode forward voltage drop.
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=20A, VGS=0V
IS=20A, VGS=0V,
dIF/dt=100A/us
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L = 62.5mH, IAS = 4A, VDD = V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 20A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
650
2
13
Min.
Typ. Max. Unit
V
0.64
V/oC
1 uA
50 uA
100 nA
-100 nA
3.7
5
V
0.16 0.19 Ω
S
2170
1470
pF
27
28
52
ns
116
40
60
17
nC
26
Typ.
366
6.8
Max. Unit
20
A
80
A
1.26 V
ns
uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
June. 2014. Rev.1.0
2/6
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