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| SW100N10A Datasheet, PDF (2/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-220 MOSFET | |||
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SAMWIN
SW100N10A
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ÎBVDSS Breakdown voltage temperature
/ ÎTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VDS=100V, VGS=0V
VDS=80V, TC=125oC
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
VDS=VGS, ID=250uA
VGS=10V, ID = 50A
VDS =20V, ID = 20A
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=50V, ID=30A, RG=25â¦
(note 4ï¼5)
VDS=80V, VGS=10V, ID=30A
(note 4ï¼5)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
VSD Diode forward voltage drop.
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=50A, VGS=0V
IS=30A, VGS=0V,
dIF/dt=100A/us
â». Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L = 0.32mH, IAS = 100A, VDD = 50V, RG=25â¦, Starting TJ = 25oC
3.
ISD ⤠100A, di/dt = 100A/us, VDD ⤠BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ⤠300us, duty cycle ⤠2%
5. Essentially independent of operating temperature.
Min.
100
2
77
Min.
Typ. Max. Unit
V
0.09
V/oC
1 uA
50 uA
100 nA
-100 nA
4
V
6
7.4 mâ¦
S
5732
679
pF
437
52
80
128 160
ns
239 300
143 170
127 160
21
nC
56
Typ.
45
81
Max. Unit
100 A
400 A
1.5 V
ns
nC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
2/5
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