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| SW045R10ES Datasheet, PDF (2/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220/TO-263 MOSFET | |||
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SW045R10ES
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ÎBVDSS Breakdown voltage temperature
/ ÎTJ coefficient
ID=250uA, referenced to 25oC
Min.
100
Typ. Max. Unit
0.04
V
V/oC
IDSS Drain to source leakage current
VDS=100V, VGS=0V
VDS=80V, TC=125oC
1 uA
50 uA
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Gfs
Forward transconductance
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
SourRcge to dGraaitne dreisoisdteanrcaetings characteristics
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VDS=VGS, ID=250uA
VGS=10V, ID=120A
VGS=10V, ID=50A
VDS=10V, ID=50A
VGS=0V, VDS=40V, f=1MHz
VDS=50V, ID=50A, RG=3â¦,
VGS=10V
(note 4,5)
VDS=50V, VGS=10V, ID=50A
(note 4,5)
VDS=0V, Scan F mode
100 nA
-100 nA
2
4
V
4.5
5.6 mâ¦
4.3
5.4 mâ¦
105
S
5140
1020
pF
44
34
48
ns
57
21
71
29
nC
15
1.8
â¦
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD Diode forward voltage drop.
IS=50A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=50A, VGS=0V,
dIF/dt=100A/us
â». Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L =2.64mH, IAS =30A, VDD=50V, RG=25â¦, Starting TJ = 25oC
3.
ISD ⤠50A, di/dt = 100A/us, VDD ⤠BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ⤠300us, duty cycle ⤠2%.
5. Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Min.
Typ.
83
185
Max. Unit
120 A
480 A
1.4 V
ns
nC
Nov. 2016. Rev. 2.0 2/6
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