SW2N10 Datasheet, PDF (1/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel SOT-23 MOSFET

SAMWIN
SW2N10
N-channel SOT-23 MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max0.24Ω)@V_GS=10V
■ Gate Charge (Typical 13nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
SOT-23
3
2
1
1. Gate 2. Source 3. Drain
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BV_DSS : 100V
I_D
: 2A
R_DS(ON) :0.24Ω
2
1
3
Order Codes
Item
Sales Type
1
SW E 2N10
Absolute maximum ratings
Marking
SW2N10
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
T_L
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Package
SOT-23
Packaging
RELL
Value
100
2*
1.26*
8
± 15
64
5
5
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
o_C
o_C
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.1.0
1/5