SW20N50U Datasheet, PDF (1/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-3P MOSFET

SAMWIN
SW20N50U
N-channel TO-3P MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 0.27Ω)@V_GS=10V
■ Gate Charge (Typ 103 nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-3P
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a
electronic ballast, and also low power switching mode power appliances.
BV_DSS : 500V
I_D
: 20A
R_DS(ON) : 0.27Ω
2
1
3
Order Codes
Item
1
Sales Type
SWW 20N50
Marking
SW20N50U
Package
TO-3P
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain to Source Voltage
I_D
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
I_DM
Drain current pulsed
V_GS
Gate to Source Voltage
E_AS
Single pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
dv/dt Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
P_D
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
T_STG, T_J Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
T_L
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
500
20*
12.6*
80
± 30
2240
500
5
386
3.1
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
0.32
0.3
37.1
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
1/5