SW20N20D Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-252 MOSFET

SW20N20D
N-channel Enhanced mode TO-252 MOSFET
Features
TO-252
 High ruggedness
 Low R_DS(ON) (Typ 0.16Ω)@V_GS=10V
 Low Gate Charge (Typ 37nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED,DC-DC
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 200V
I_D
: 20A
R_DS(ON) : 0.16Ω
2
1
3
Item
Sales Type
1
SW D 20N20D
Absolute maximum ratings
Marking
SW20N20D
Package
TO-252
Packaging
REEL
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
200
20*
13*
80
± 20
234
17
5
166.7
1.3
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
Value
0.75
Unit
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2017. Rev. 2.0
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