SW20N03A Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode DFN3*3 MOSFET

SW20N03A
N-channel Enhanced mode DFN3*3 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 19mΩ)@V_GS=10V
(Typ 23mΩ)@V_GS=4.5V
 Low Gate Charge (Typ 14nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:DC-DC Converter，Inverter，
DFN3*3
BV_DSS :30 V
I_D
: 5.7A
R_DS(ON) : 19mΩ@V_GS=10V
23mΩ@V_GS=4.5V
D(5,6,7,8)
Synchronous Rectification
G(4)
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
S(1,2,3)
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
1
SW H 20N03A
Marking
SW20N03A
Package
DFN3*3
Packaging
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
30
5.7*
3.6*
23
± 20
41
3
5
1.5
0.01
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
Symbol
Parameter
Value
Unit
R_thja Thermal resistance, Junction to ambient
86
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design.
86^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0
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