SW200R10VT Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-252/TO-251/SOP-8 MOSFET

SW200R10VT
N-channel Enhanced mode TO-252/TO-251/SOP-8 MOSFET
Features
TO-252 TO-251 SOP-8
 High ruggedness
D
D
 Low R_DS(ON) (Typ 19.5mΩ)@V_GS=4.5V
D
D
(Typ 18.7mΩ)@V_GS=10V
 Low Gate Charge (Typ 86nC)
G
S
S
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Synchronous Rectification,
1
1
2
3
2
3
S
G(4) D(5,6,7,8)
S(1,2,3)
Li Battery Protect Board, Inverter. ^{TO-252/TO-251：1. Gate 2. Drain 3. Source}
BV_DSS : 100V
I_D
: 36A
R_DS(ON) : 19.5mΩ@V_GS=4.5V
18.7mΩ@V_GS=10V
D
SOP-8: 4.Gate 5,6,7,8.Drain 1,2,3.Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
G
S
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
1
SW D 200R10VT
2
SW I 200R10VT
3
SW K 200R10VT
Marking
SW200R10VT
SW200R10VT
SW200R10VT
Package
TO-252
TO-251
SOP-8
Packaging
REEL
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Total power dissipation (@T_A=25^oC)
Derating factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-252 TO-251 SOP-8
100
36*
23*
144
± 20
72
11
5
117
160
2.9
0.9
1.3
0.02
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W
W/^oC
o_C
Value
TO-252 TO-251
1.07
0.78
73
SOP-8
43
Unit
o_C/W
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design.
SOP-8 R_thja : 43^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2017. Rev. 3.0
1/7