SW1N60DC Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-252/SOT-223 MOSFET

SW1N60DC
N-channel Enhanced mode TO-252/SOT-223 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 7Ω)@V_GS=10V
 Low Gate Charge (Typ6.3 nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Charge,Adaptor,LED
TO-252
SOT-223
12
3
12
3
1. Gate 2. Drain 3. Source
BV_DSS : 600V
I_D
: 1A
R_DS(ON) : 7Ω
2
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
1
SW D 1N60DC
2
SW SA 1N60DC
Absolute maximum ratings
Marking
SW1N60DC
SW1N60DC
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
(note 1)
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Package
TO-252
SOT-223
Packaging
REEL
REEL
Value
TO-252 SOT-223
600
1*
0.6*
4
± 30
50
5
5
52
9.26
0.4
0.07
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
TO-252 SOT-223
2.4
13.5
100
110
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 4.0
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