SW1N60 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel MOSFET

SAMWIN
SW1N60
N-channel MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 12 Ω)@V_GS=10V
■ Gate Charge (Max 6nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-251
TO-252
TO-126
12 ₃
12
3
12 ₃
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BV_DSS : 600V
I_D
: 1.0A
R_DS(ON) : 12ohm
2
1
3
Order Codes
Item
1
2
3
Sales Type
SW L 1N60
SW I 1N60
SW D 1N60
Marking
SW1N60
SW1N60
SW1N60
Package
TO-126
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
TO-126
1.0
0.65
4.0
30
0.23
Value
TO-251 TO-252
600
1.0
0.65
4.0
± 30
52
0.3
4.5
30
0.23
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Thermal characteristics
Symbol
R_thjC
R_thCS
R_thjA
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Maximum Value
TO-126
TO-251
TO-252
4.2
50
110
Unit
o_C/W
o_C/W
o_C/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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