SW1N55D Datasheet, PDF (1/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel IPAK MOSFET

SAMWIN
SW1N55D
N-channel IPAK MOSFET
Features
TO-251
■ High ruggedness
■ R_DS(ON) (Max6.5Ω)@V_GS=10V
■ Gate Charge (Typical 7nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BV_DSS : 550V
I_D
: 1A
R_DS(ON) :6.5Ω
2
1
3
Order Codes
Item
1
Sales Type
SW I 1N55
Marking
SW1N55D
Package
TO-251
Packaging
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
550
1*
0.6*
4
± 30
81.9
20.7
5
77.1
0.62
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
1.65
92
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 2.0
1/5