SW19N10 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel MOSFET

SAMWIN
SW19N10
N-channel MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 0.1Ω)@V_GS=10V
■ Gate Charge (Typ 100nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220
TO-252
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
This N-channel enhancement mode field-effect power transistor using SAMWIN
semiconductor’s advanced planar stripe, DMOS technology intended for battery
Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize R_DS(ON), low gate charge and high rugged
avalanche characteristics.
BV_DSS : 100V
I_D
: 17A
R_DS(ON) : 0.1 ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW P 19N10
SW D 19N10
Marking
SW19N10
SW19N10
Package
TO-220
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
100
17
11
68
± 25
215
7.5
6.0
62.5
0.5
-55 ~ + 150
300
Thermal characteristics
Symbol
Parameter
R_thjc
R_thcs
R_thja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Min.
Typ.
Max.
2.0
0.5
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
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