SW18N50D Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F /TO-247 MOSFET

SW18N50D
N-channel Enhanced mode TO-220F /TO-247 MOSFET
Features
TO-220F
TO-247
 High ruggedness
 Low R_DS(ON) (Typ 0.24Ω)@V_GS=10V
 Low Gate Charge (Typ 88nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED , Charge, PC Power
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 500V
I_D
: 18A
R_DS(ON) : 0.24Ω
2
1
3
Item
Sales Type
Marking
Package
Packaging
1
SW F 18N50D
SW18N50D
TO-220F
TUBE
2
SW T 18N50D
SW18N50D
TO-247
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
(note 2)
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-220F TO-247
500
18*
11*
72
± 30
991
52
5
43
312.5
0.34
2.5
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220F TO-247
2.9
0.4
48
38
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2017. Rev. 3.0
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