SW16N65K Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-220 /TO-220F MOSFET

SAMWIN
SW16N65K
N-channel TO-220 /TO-220F MOSFET
Features
TO-220
TO-220F
■ High ruggedness
■ R_DS(ON) (Max0.25Ω)@V_GS=10V
■ Gate Charge (Typical 43nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12
3
12 ₃
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BV_DSS : 650V
I_D
: 16A
R_DS(ON) :0.25Ω
2
1
3
Order Codes
Item
Sales Type
1
SW P 16N65K
2
SW F 16N65K
Marking
SW16N65K
SW16N65K
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
TO-220F
650
16*
10.1*
64
± 30
300
16
5
271.7
32.2
2.2
0.26
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
TO-220
TO-220F
0.46
3.88
55.4
45.1
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
June. 2014. Rev.1.0
1/6