SW16N60K Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F MOSFET

SW16N60K
N-channel Enhanced mode TO-220F MOSFET
Features
TO-220F
 High ruggedness
 Low R_DS(ON) (Typ 0.21Ω)@V_GS=10V
 Low Gate Charge (Typ 43nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED, Charge, PC Power
12 ₃
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 600V
I_D
: 16A
R_DS(ON) :0.21Ω
2
1
3
Order Codes
Item
1
Sales Type
SW F 16N60K
Marking
SW16N60K
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
(note 1)
(note 2)
E_AR
Repetitive avalanche energy
(note 1)
dv/dt Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
Value
600
16*
10.1*
64
±30
300
16
5
32.2
0.26
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
Thermal resistance, Junction to case
R_thja
Thermal resistance, Junction to ambient
Value
3.88
45.1
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
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