SW160R12VT Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220 MOSFET

SW160R12VT
N-channel Enhanced mode TO-220 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 16.4mΩ)@V_GS=4.5V
Low R_DS(ON) (Typ 14.6mΩ)@V_GS=10V
 Low Gate Charge (Typ 64nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
TO-220
1
2
3
BV_DSS : 120V
I_D
: 50A
R_DS(ON) : 16.4mΩ@V_GS=4.5V
14.6mΩ@V_GS=10V
2
Li Battery Protect Board, Inverter
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
1
3
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
1
SW P 160R12VT
SW160R12VT
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
(note 1)
(note 2)
E_AR
dv/dt
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 3)
Total power dissipation (@Tc=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J
T_L
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Package
TO-220
Value
120
50*
32*
200
± 20
207
22
5
176
1.4
-55 ~ + 150
300
Packaging
TUBE
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
0.71
52
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2017. Rev. 3.0
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