SW15P03 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – P-channel Enhanced mode SOP-8 MOSFET

SW15P03
P-channel Enhanced mode SOP-8 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 10mΩ)@V_GS=-10V
Low R_DS(ON) (Typ 14mΩ)@V_GS=-4.5V
 Low Gate Charge (Typ 48nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Adaptor Input Switch
for Notebook PC
SOP-8
D
D
D
D
G
S
S
S
BV_DSS : -30V
I_D
: -15A
R_DS(ON) : 10mΩ @V_GS=-10V
14mΩ @V_GS=-4.5V
2
1. Gate 2. Drain 3. Source
General Description
1
This power MOSFET is produced with advanced technology of SAMWIN.
3
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW K 15P03
SW15P03
SOP-8
REEL
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
-30
-15*
-9.5*
-60
± 20
81
5
2
0.016
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thja
Parameter
Thermal resistance, Junction to ambient（note）
Value
62
Unit
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design.
62 ^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2016. Rev. 2.0 1/6