SW15P02 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET

SW15P02
P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET
Features
 High ruggedness
TO-251 TO-252 DFN3*3 DFN5*6
 Low R_DS(ON) (Typ 9.4mΩ)@V_GS=-4.5V
Low R_DS(ON) (Typ 8.1mΩ)@V_GS=-10V
 Low Gate Charge (Typ 91nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: DC-DC Converter,
Motor Control
12
3
12
3
G(4) D(5,6,7,8) S(1,2,3)
TO251/252:1. Gate 2. Drain 3. Source
General Description
DFN3*3&DFN5*6:4.Gate 5,6,7,8.Drain 1,2,3.Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
BV_DSS : -20V
I_D
: -15A
R_DS(ON) : 9.4mΩ @V_GS=-4.5V
8.1mΩ @V_GS=-10V
Order Codes
Item
Sales Type
1
SW I 15P02
2
SW D 15P02
3
SW H 15P02
4
SW HA 15P02
Absolute maximum ratings
Marking
SW15P02
SW15P02
SW15P02
SW15P02
Package
TO-251
TO-252
DFN3*3
DFN5*6
Packaging
TUBE
REEL
REEL
REEL
Symbol
V_DSS
I_D
I_DM
V_GS
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Total power dissipation (@Ta=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
TO-251
69.4
0.6
Value
TO-252 DFN3*3 DFN5*6
-20
-15*
-9.5*
-60
± 12
5
62.5
1.5
3.3
0.5
0.01 0.03
-55 ~ + 150
300
Unit
V
A
A
A
V
V/ns
W
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-251 TO-252 DFN3*3 DFN5*6
1.8
2
62
81
38
Unit
o_C/W
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user‘s
board design. DFN3*3 R _thja 81^oC/W & DFN5*6 R _thja 38^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2017. Rev. 3.0
1/7