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SW15N50A Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F MOSFET
SW15N50A
N-channel Enhanced mode TO-220F MOSFET
Features
TO-220F
 High ruggedness
 Low RDS(ON) (Typ 0.29Ω)@VGS=10V
 Low Gate Charge (Typ 72nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Charge, Adaptor,LED
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BVDSS : 500V
ID
: 15A
RDS(ON) : 0.29Ω
2
1
3
Order Codes
Item
Sales Type
1
SW F 15N50A
Marking
SW15N50A
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating factor above 25oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
500
15*
9.5*
60
±30
1550
140
5
51.2
0.4
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc Thermal resistance, Junction to case
Rthja Thermal resistance, Junction to ambient
Value
2.44
45.4
Unit
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
1/6