English
Language : 

SW15N06V Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode SOP-8 MOSFET
SW15N06V
N-channel Enhanced mode SOP-8 MOSFET
Features
 High ruggedness
 Low RDS(ON) (Typ 7.5mΩ)@VGS=10V
(Typ 8.5mΩ)@VGS=4.5V
 Low Gate Charge (Typ 79nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:DC-DC Converter, Motor Control
SOP-8
D
D
D
D
G
S
S
S
BVDSS : 60V
ID
: 15A
RDS(ON) : 7.5mΩ@VGS=10V
8.5mΩ@VGS=4.5V
D
Power Supplies
G
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
S
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
Order Codes
Item
Sales Type
1
SW K 15N06V
Marking
SW15N06V
Package
SOP-8
Packaging
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@TC=25oC)
PD
Derating factor above 25oC
TSTG, TJ Operating junction temperature & storage temperature
Maximum lead temperature for soldering
TL
purpose, 1/8 from case for 5 seconds.
Value
60
15*
9.5*
60
± 20
371
14
5
2.6
0.02
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
Unit
Rthja Thermal resistance, Junction to ambient(note)
48
oC/W
Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's
board design.
48 oC/W on a 1 in2 pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 2.0 1/6